Title Short Channel (L=1.5 um) MOSFET with Substrate Doping = 1e15
$
$ * * * A : define rectangular grid * * * 
$
mesh 	rectangular nx=38 ny=23 outf=nmeshb.msh
x.m	n=1	l=0	r=1
x.m	n=4	l=0.50	r=.7
x.m	n=8	l=0.70	r=.75
x.m	n=15	l=0.95	r=1.25
x.m	n=24	l=2.05	r=1.0
x.m	n=31	l=2.30	r=.8
x.m	n=35	l=2.50	r=1.33
x.m	n=38	l=3.00	r=1.40
y.m	n=1	l=-.035	r=1
y.m	n=4	l=0	r=1
y.m	n=9	l=0.10	r=1.25
y.m	n=16	l=0.50	r=1.15
y.m	n=23	l=2.0	r=1.25
$
$ * * * eliminate * * * 
$
elim    ix.lo=13 ix.hi=26 iy.lo=20 iy.hi=23 y.dir
elim    ix.lo=1  ix.hi=38 iy.lo=21 iy.hi=23 y.dir
elim    ix.lo=5  ix.hi=13 iy.lo=21 iy.hi=23 y.dir
elim    ix.lo=25 ix.hi=33 iy.lo=21 iy.hi=23 y.dir
$
$ * * * distort * * * 
$
spread  left w=0.70 up=4  lo=16 y.lo=0.5 en=1.2 gr1=1.3
+       gr2=.5 mid=13 y.mid=0.35
spr     righ w=0.70 up=4  lo=16 y.lo=0.5 en=1.2 gr1=1.3
+       gr2=.5 mid=10 y.mid=0.3
$
$ * * * regions * * * 
$
region	num=1 ix.l=1  ix.h=38 iy.l=1  iy.h=4 oxide
region	num=2 ix.l=1  ix.h=38 iy.l=4  iy.h=23 silicon
$
$ * * * electrodes * * * 
$
elec	num=1	ix.l=4	ix.h=35	iy.l=1	iy.h=1
elec	num=2	ix.l=1	ix.h=38	iy.l=23	iy.h=23
elec	num=3	ix.l=1	ix.h=3	iy.l=4	iy.h=4
elec	num=4	ix.l=36	ix.h=38	iy.l=4	iy.h=4
$
$ * * * doping and fixed charge * * *
$
dop 	reg=2 unif conc=1e15 p.type
dop 	reg=2 n.type gaussian x.right=.5 ratio.lateral=.8
+       conc=2e19 junction=.5
dop 	reg=2 n.type gaussian x.left=2.5 ratio.lateral=.8
+       conc=2e19 junction=.5
$
$....Plot grid
$options plotdev=stout
$plot.2d grid no.top bound
$plot.2d no.top bound junction
$contour doping abs log min=10 max=20 del=2
end
