Title 1.5 um Channel MOSFET with substrate doping of 1e15 [Linear + Saturation Regions]
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$ * * * Load Mesh * * *
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mesh    inf=nmeshsoi.msh
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$ * * * Materials/Contacts * * *
mater   num=2 g.surf=0.75
contact num=1 n.poly
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$ * * * Models * * *
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models  conmob temp=300 fldmob print
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$ * * * Plot Grid  * * *
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$options plotdev=garfield
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$plot.2d grid no.top bound pause
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$ * * * Plot Doping Contours and 1d.slices * * *
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$load inf=soi.slv
$plot.2d no.top bound junction depl.edge outfile=n4tsd15pot2d
$contour potential min=-1 max=1 del=.2
$plot.1d potential min=-1.2 max=1.2 a.x=1.5 a.y=0 b.x=1.5 b.y=2 points outfile=n4pot
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$load inf=soibias.1.slv
$plot.2d no.top bound junction depl.edge
$contour doping absolute log min = 15 max = 20 del = .5 pause
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$plot.2d no.top bound junction depl.edge
$contour doping absolute log min = 15 max = 20 del = .5 pause
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$
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$ * * * Plot the Subthreshold Operation * * *
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$ > > > Plot Ids vs Vgs (Log and Linear Scale) < < <
$plot.1d inf=soiIV.log x.ax=v1 y.ax=i4 absolute logarithm points pause
$plot.1d inf=soiIV.log x.ax=v1 y.ax=i4 points pause
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