Title Long Channel MOSFET (1.5um channel) with substrate doping of 1e15 [Subthreshold Region]
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$ * * * A : define rectangular grid * * * 
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mesh 	inf=nmeshe.msh
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$ * * * Symbolic Factorization (Gummel) and Parameters * * * 
symb    gummel carr=1 electrons
method  iccg damped
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$ * * * Materials/Contacts * * * 
mater   num=2 g.surf=0.75
contact num=1 n.poly
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$ * * * Models * * * 
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models  conmob temp=300 fldmob print
impact crowell lamdae=6.2e-7 lamdah=3.8e-7
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$ * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 
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$ * * * Solve Initial Bias Point; Save in nbias/n3teL1d15init * * * 
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solve   initial outfile=nbias.slv
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$ * * * Switch to Newton Method * * *
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symb    newton carriers=1 electrons
method  autonr 
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$ * * * Setup IV Log File * * * 
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log 	outf=nIV.log
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$ Solve for Vds = 0.1 volts; Save in nbias/n3teL1d15a * * * 
solve   v4=0.1 outf=nbias.1.slv
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$ * * * Step Vgs from -0.5 to 2.0 volts (vds=0.1 volts)
solve   v1=-0.5 vstep=0.1 nsteps=25 electrode=1
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$options plotdev=stout
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$ * * * Plot Id vs Vgs (Log and Linear Scales)
$plot.1d   x.axis=v1 y.axis=i4 logarithm pause
$plot.1d   x.axis=v1 y.axis=i4 pause
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$ * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 
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$***** Increase the drain voltage from v4=0 to v4=100mv *****
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solve v1=0.0 v2=0.0 v3=0.0 v4=0.01 
+ vstep=0.01 nsteps=8 elect=4 
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solve v1=0.0 v2=0.0 v3=0.0 v4=0.10 outf=bbL20dv4.100mv.slv
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$***** Increase the gate voltage from v1=0 to v1=5v *****
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solve prev v1=0.1 v2=0.0 v3=0.0 v4=0.10 
+ vstep=0.10 nsteps=8 elect=1 
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solve v1=1.0 v2=0.0 v3=0.0 v4=0.10 
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solve prev v1=1.0 v2=0.0 v3=0.0 v4=0.10 
+ vstep=0.20 nsteps=20 elect=1 
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solve prev v1=5.0 v2=0.0 v3=0.0 v4=0.10 outf=bbL20d.100mv.slv
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end

