Title 1.5um Channel MOSFET with substrate doping of 1e15 [Subthreshold Region]
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$ * * * A : define rectangular grid * * *
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mesh    inf=nmeshsoi.msh
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$ * * * Symbolic Factorization (Gummel) and Parameters * * *
symb    gummel carr=1 electrons
method  iccg damped
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$ * * * Materials/Contacts * * *
mater   num=2 g.surf=0.75
contact num=1 n.poly
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$ * * * Models * * *
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models  conmob temp=300 fldmob print
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$ * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * *
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$ * * * Solve Initial Bias Point; Save in soi.init * * *
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solve   initial outfile=soi.slv
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$ * * * Switch to Newton Method * * *
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symb    newton carriers=1 electrons
method  autonr
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$ * * * Setup IV Log File * * *
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log     outf=soiIV.log
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$ Solve for Vds = 0.1 volts; Save in soibias.1 * * * *
solve   v4=0.1 outf=soibias.1.slv
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$ * * * Step Vgs from -0.5 to 2.0 volts (vds=0.05 volts)
solve   v1=-0.5 vstep=0.05 nsteps=50 electrode=1
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$options plotdev=sp
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$ * * * Plot Id vs Vgs (Log and Linear Scales)
$plot.1d   x.axis=v1 y.axis=i4 logarithm pause
$plot.1d   x.axis=v1 y.axis=i4 pause
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end
