Title Long Channel MOSFET (1.5um channel) with substrate doping of 1e15 [Subthreshold Region]
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$ * * * A : define rectangular grid * * * 
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mesh 	inf=nmeshb.msh
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$ * * * Symbolic Factorization (Gummel) and Parameters * * * 
symb    gummel carr=1 electrons
method  iccg damped
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$ * * * Materials/Contacts * * * 
mater   num=2 g.surf=0.75
contact num=1 n.poly
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$ * * * Models * * * 
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models  conmob temp=300 fldmob print
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$ * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 
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$ * * * Solve Initial Bias Point; Save in nbiasbinit * * * 
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solve   initial outfile=nbiasbinit.slv
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$ * * * Switch to Newton Method * * *
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symb    newton carriers=1 electrons
method  autonr 
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$ * * * Setup IV Log File * * * 
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log 	outf=nIVb15.log
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$ Solve for Vds = 0.1 volts; Save in nbiasb15a * * * 
solve   v4=0.1 outf=nbiasb15a.slv 
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$ * * * Step Vgs from -0.5 to 2.0 volts (vds=0.1 volts) * * * 
solve   v1=-0.5 vstep=0.1 nsteps=25 electrode=1
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$options plotdev=stout
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$ * * * Plot Id vs Vgs (Log and Linear Scales)  * * * 
$plot.1d   x.axis=v1 y.axis=i4  abs logarithm 
$plot.1d   x.axis=v1 y.axis=i4 
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