
{Parameters for the new MOS models developed by Michael Godfrey}

{This is an example parameter file, annotated to show how to      }
{determine parameter values from MOSIS data or SPICE extractions  }
{This example is for an N-well process -- to model a P-well       }
{process, reverse N and P in well-related discussions.            }

{The syntax is:						          }

{1. Lines enclosed in braces like this one are comments.          }
{2. 32: <name> <var_name> <value> indicates a data field          }
{   where: <name>     is the object ("gate") name,		  }
{          <var_name> is the variable in the object,		  }
{          <value>    is the value assigned to the variable.      } 

{Physical Constants}

{Temperature}
32: Physical T 298

{Boltzmann's constant}
32: Physical k  1.380658e-23

{Charge on an electron}
32: Physical q  1.60217733e-19

{permittivity of vacuum f/m}
32: Physical e_v 8.854187817e-12

{permittivity of Si f/m}
32: Physical e_s 1.035939974589e-010

{permittivity of SiO2 f/m}
32: Physical e_ox 3.453133248630e-011

{silicon-oxide interface charge}
32: Physical phi_ms -0.3

{The parameters below are determined from process and               }
{specific run data. Most of this information may be taken from      }
{an appropriate MOSIS PRM file. Below are the relevant sections     }
{taken from the MOSIS file n6ay.prm                                 }
{The values used by analog are indicated by [name]. For most values }
{there is an N-device and a P-device value.                         }
{Each anaLOG variable is shown in [...], and is marked by ^^^^      }
{under the name.						    } 

{TRANSISTOR PARAMETERS   W/L      N-CHANNEL P-CHANNEL  UNITS          }

{ Delta length                    0.13[DeltaL]  0.16[DeltaL]  microns }
{                                     ^^^^^^^^      ^^^^^^^^          }
{  (L_eff = L_drawn-DL)                                               }

{ Delta width                     0.33[DeltaW]  0.34[DeltaW]  microns }
{                                     ^^^^^^^^      ^^^^^^^^          }
{  (W_eff = W_drawn-DW)                                               }


{CAPACITANCE PARAMETERS  N+DIFF  P+DIFF   POLY  METAL1  METAL2   METAL3  UNITS}
{ Area (substrate)       544     932       90    37      19       16     aF/um^2}
{		  [aCactive]  [aCactive]                                        }
{                 ^^^^^^^^^^  ^^^^^^^^^^					}
{ Area (poly)                                    60      18              aF/um^2}
{ Area (metal1)                                          43       16     aF/um^2}
{ Area (metal2)                                                   45     aF/um^2}
{ Area (N+active)                        3619                            aF/um^2}
{ Area (P+active)                        3431                            aF/um^2}
{ Area (cap well)                        2131                            aF/um^2}
{ Fringe (substrate)     223     242                                     aF/um}
{ Fringe (N+active)                       107                            aF/um}

{ N6AY SPICE LEVEL3 PARAMETERS}

{.MODEL CMOSN NMOS LEVEL=3 PHI=0.700000[psi] TOX=9.5000E-09[Tox] XJ=0.200000U TPG=1}
{                                      ^^^^^               ^^^^^       }
{+ VTO=0.6674 DELTA=1.4270E+00 LD=6.3300E-08 KP=1.7146E-04             }
{+ UO=471.7[mu0] THETA=1.6690E-01 RSH=3.3470E+01 GAMMA=0.5219          }
{          ^^^^^						       }
{+ NSUB=1.0840E+17[Na] NFS=5.9080E+11 VMAX=2.2650E+05 ETA=2.0550E-02   }
{                 ^^^^						       }
{+ KAPPA=2.1270E-01 CGDO=9.0000E-11 CGSO=9.0000E-11[linCgs]            }
{                                                  ^^^^^^^^            }
{+ CGBO=3.6007E-10 CJ=5.69E-04[aCactive] MJ=0.661 CJSW=2.00E-11        }
{      			      ^^^^^^^^^^			       }
{+ MJSW=0.609 PB=0.99                                                  }
{* Weff = Wdrawn - Delta_W                                             }
{* The suggested Delta_W is 3.3260E-07                                 }
{.MODEL CMOSP PMOS LEVEL=3 PHI=0.700000[psi] TOX=9.5000E-09[Tox] XJ=0.200000U TPG=-1}
{                                      ^^^^^               ^^^^^
{+ VTO=-0.9188 DELTA=3.5350E-01 LD=7.8860E-08 KP=3.8312E-05            }
{+ UO=105.4[mu0] THETA=3.3670E-02 RSH=1.6950E+01 GAMMA=0.7396          }
{          ^^^^^						       }
{+ NSUB=2.1770E+17[Na] NFS=5.9080E+11 VMAX=1.5650E+05 ETA=1.7260E-02   }
{		  ^^^^						       }
{+ KAPPA=8.8780E+00 CGDO=9.0000E-11 CGSO=9.0000E-11[linCgs]            }
{                                                  ^^^^^^^^	       }
{+ CGBO=3.6237E-10 CJ=9.19E-04[aCactive] MJ=0.321 CJSW=4.60E-10        }
{			      ^^^^^^^^^^                               }
{+ MJSW=0.100 PB=0.42                                                  }
{* Weff = Wdrawn - Delta_W                                             }
{* The suggested Delta_W is 3.3680E-07                                 }

{parameters for N model}

{MOSIS Process Name: See MOSIS file cmos14tb-tech.inf}
32: DevTechN Process SCN3M_SUBM

{photolithography scaling factor -- identical for P and N}
{Value for 0.5um process: appropriate for HP CMOS14TB}

32: DevTechN lambda 0.25e-6

{oxide thickness}
{This parameter may be taken from the HP specs (sadly HP has       }
{declared the specs to be proprietary (like, Intel would care??)   }
{so it is necessary to sign a non-disclosure with MOSIS to learn   }
{the process value. However, the value may also be taken from the  }
{SPICE LEVEL 3 data in a PRM file for the HP cmos14tb process.     }
32: DevTechN Tox 90e-10

{potential at neutral edge of depletion region}
32: DevTechN psi 0.7

{bulk doping concentration}
32: DevTechN Na 1.0840e17

{carrier mobility}
32: DevTechN mu0 471.7

{Ldrawn-Leff}
32: DevTechN deltaL 0.13e-6

{Wdrawn-Weff}
32: DevTechN deltaW 0.33e-6

{drain-dependence Na factor}
32: DevTechN del_NaS 0

{Early effect slope parameter}
32: DevTechN Early_s 0.16

{Early effect intercept parameter}
32: DevTechN L_0 0.1e-6

{Run Specific Parameters}

{The specific fab run name}
32: RunSpecN Fabrun N6AY

{fixed oxide charge}
32: RunSpecN Qss 0.0

{Na multiplicative delta}
32: RunSpecN del_Na0 1

{mu multiplicative delta}
32: RunSpecN del_mu 1

{AC Parameters}

{Capacitance modeling is the weak link in the current version           }
{of these models. All capacitances are modeled linearly. See            }
{comments below for details on each value                               }

{N+ active (source/drain area) Capacitance F/um^2                       }
{MOSIS CAPCITANCE TABLE Area (substrate) -- N+DIFF or SPICE CMOSN CJ    }
32: DevTechN aCactive 544e-18

{Well-to-bulk Capacitance F/um^2                                        }
{Since the n-channel transistor is in the substrate, this parameter     }
{is meaningless. We choose an insignificantly small value (not zero) to }
{prevent numerical problems in the simulation engine                    } 
32: DevTechN aCwell 1e-18

{Overlap capacitance between gate and source F/um }
{SPICE CGDO or CGSO * 10-6}
32: DevTechN linCgs 90e-18

{Gate capacitance -- used for AC parasitics only F/um^2}
{The nonlinear C(V) function is upper-bounded by Cox,                   }
{and close to CGBO in subthreshold, which we use below.                 }
{Replace with COX for conservative delay estimates for digital designs. }
32: DevTechN aCgw 3.6007e-16


{Parameters for P model}

{oxide thickness}
32: DevTechP Tox 90e-10

{potential at neutral edge of depletion region}
32: DevTechP psi 0.7

{bulk doping concentration}
32: DevTechP Na 2.177e17

{carrier mobility}
32: DevTechP mu0 105.4

{Ldrawn-Leff}
32: DevTechP deltaL 0.16e-6

{Wdrawn-Weff}
32: DevTechP deltaW  0.34e-6

{drain-dependence Na factor}
32: DevTechP del_NaS 0

{Early effect slope parameter}
32: DevTechP Early_s 0.16

{Early effect intercept parameter}
32: DevTechP L_0 0.1e-6

{Run Specific Parameters}

{fixed oxide charge}
32: RunSpecP Qss 0.00010

{oxide thickness}
32: RunSpecP del_Na0 1

{oxide thickness}
32: RunSpecP del_mu 1

{AC Parameters}

{Capacitance modeling is the weak link in the current version           }
{of these models. All capacitances are modeled linearly. See            }
{comments below for details on each value                               }

{P+ active (source/drain area) Capacitance F/um^2}
{MOSIS CAPCITANCE TABLE Area (substrate) -- P+DIFF or SPICE CMOSP CJ      }
32: DevTechP aCactive 932e-18

{Well-to-bulk Capacitance F/um^2}
{Since the p-channel transistor is in the well, this parameter has        }
{meaning. This parameter is not specified by MOSIS, nor is it in the HP   }
{specs, so we have to make a guess.					  }
{Here, we use half the N+DIFF capacitance as a (very loose) upper bound   }
32: DevTechP aCwell 272e-18

{Overlap capacitance between gate and source F/um }
{SPICE CGDO or CGSO * 10-6}
32: DevTechP linCgs 90e-18

{Gate capacitance -- used for AC parasitics only F/um^2}
{The nonlinear C(V) function is upper-bounded by Cox,                     }
{and close to CGBO in subthreshold, which we use below.                   }
{Replace with COX for conservative delay estimates for digital designs. }
32: DevTechP aCgw 3.6237e-16


{Individual Transistor Models}

{Gate width of transistor, lambda}
32: Nfet7F Wdrawn 6

{Gate length of transistor, lambda}
32: Nfet7F Ldrawn 4

{Area of source region, m^2}
32: Nfet7F SArea 36e-6

{Area of drain region, m^2}
32: Nfet7F DArea 36e-6

{Area of well region, m^2}
32: Nfet7F WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Nfet7F NaOffset 1.0

{offset in mobility, multiplicative unitless}
32: Nfet7F MuOffset 1.0

{offset in Qss, additive (C)}
32: Nfet7F QssOffset 0.0

{Gate width of transistor, lambda}
32: Nfet7T Wdrawn 6

{Gate length of transistor, lambda}
32: Nfet7T Ldrawn 4

{Area of source region, m^2}
32: Nfet7T SArea 36e-6

{Area of drain region, m^2}
32: Nfet7T DArea 36e-6

{Area of well region, m^2}
32: Nfet7T WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Nfet7T NaOffset 1.0

{offset in Mu0 mobility, multiplicative unitless}
32: Nfet7T MuOffset 1.0

{offset in Qss, additive (C)}
32: Nfet7T QssOffset 0.0

{Gate width of transistor, lambda}
32: Pfet7F Wdrawn 6

{Gate length of transistor, lambda}
32: Pfet7F Ldrawn 4

{Area of source region, m^2}
32: Pfet7F SArea 36e-6

{Area of drain region, m^2}
32: Pfet7F DArea 36e-6

{Area of well region, m^2}
32: Pfet7F WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Pfet7F NaOffset 1.0

{offset in mobility, multiplicative unitless}
32: Pfet7F MuOffset 1.0

{offset in Qss, additive (C)}
32: Pfet7F QssOffset 0.0

{Gate width of transistor, lambda}
32: Pfet7T Wdrawn 6

{Gate length of transistor, lambda}
32: Pfet7T Ldrawn 4

{Area of source region, m^2}
32: Pfet7T SArea 36e-6

{Area of drain region, m^2}
32: Pfet7T DArea 36e-6

{Area of well region, m^2}
32: Pfet7T WArea 100e-6

{offset in Na density, multiplicative unitless}
32: Pfet7T NaOffset 1.0

{offset in mobility, multiplicative unitless}
32: Pfet7T MuOffset 1.0

{offset in Qss, additive (C)}
32: Pfet7T QssOffset 0.0








